Zeiss Cross-Beam 340

Technical data

Scanning electron microscopy

  • Schottky Emitter 
    • Acceleration voltage: 0,1-30 kV
    • Maximum current: 100 nA
    • Resolution: ~1 nm
  • Detektors
    • Secondary electrons (SE)
    • Backscattering electrons (BSE)
    • In-lens
    • Secondary ions (SI)
    • Transmission electrons (STEM)
    • Energy-dispersive X-ray spectroscopy (EDX)
    • Variable pressure-SE
  • Sample size
    • Lock: 10 cm x 5 cm
    • Sample table: 10 cm x 10 cm x 5 cm
  • Variable pressure operation possible 10-60 Pa
  • Active vibration damping and magnetic field compensation

Focused Ion Beam

  • Capella Ga-ion source
    • Acceleration voltage: 0,5-30 kV
    • Resolution: 3 nm
    • Maximum current: 100 nA
  • Gas injection systems
    • for Pt deposition
    • N2 for charge compensation
  • Micromanipulator omni sample 200 for in-situ manipulation of TEM lamellae
  • Plasma cleaner
  • Flood-gun for charge compensation