High-impedance films

High-impedance films with a particularly low temperature coefficient (< 20 ppm/K) were developed especially for SMD resistors. A CrSi layer doped with oxygen that is precipitated by means of gas flow sputtering forms the material basis. High-impedance films with resistances in the range of 1013-1014 MΩ on the basis of a-C:H:Si:N were produced for applications in particle research.