Scanning electron microscopy (SEM) supports the imaging of surfaces, cracks or cross-section polishes with a high resolution (~ 2-5 nm) and great depth of field. It is a versatile tool making it possible to pass through the magnification range of 20 to 200,000x within seconds, switch quickly from one sample to the next and to also image non-conductive surfaces by means of sputtering. In combination with X-ray spectroscopy EDX, it is the ideal tool for defect analysis since it combines microscopic visualisation with chemical point analysis. On cracks or cross-section polishes, it can be used for precise film thickness determination in the nanometre to millimetre range. Various detectors (Inlens, SE, BSE) can be used to highlight different contrasts, for example the element or topography contrast.