Kitakyushu, Japan  /  3.9.2018  -  6.9.2018

10. Hot Wire (Cat) Chemical Vapor Deposition Conference

Bereits zum 10 Mal treffen sich Experten aus Industrie und Wissenschaft zur HWCVD Konferenz vom 3. bis 6. September 2018, um aktuelle Entwicklungen, Forschungsergebnisse und Trends auf dem Gebiet der Heißdraht-aktivierten Gasphasenabscheidung - Hot Wire Chemical Vapor Deposition (HWCVD) zu diskutieren.

Das Fraunhofer IST beteiligt sich mit einem Beitrag am wissenschaftlichen Programm der Konferenz. Dr. Lothar Schäfer, stellvertretender Institutsleiter des Fraunhofer IST und Mitglied im Programmkommittee der Konferenz stellt mit einem Vortrag zum Thema »Hot-wire CVD developments and applications« Forschungsergebnisse und Anwendungsmöglichkeiten der am Fraunhofer-Institut für Schicht und Oberflächentechnik IST entwickelten Abscheidung von Diamant- und Silizium-basierten Schichten mit der Heißdraht-aktivierten Gasphasenabscheidung auf Flächen bis zu einem halben Quadratmeter vor.


Montag, 3. September 2018

9:50 - 10:30 Uhr

»Hot-wire CVD developments and applications«

L. Schäfer

Activation of gas phases by hot wires is a versatile method to deposit diamond and silicon-based films on a variety of different substrate materials and geometries . Although the wire temperatures for the two different film types are similar, the substrate temperatures are extremely different mainly due to the difference in gas phase pressure. For diamond deposition, typical substrate temperatures are in the range of 600°C to 1000°C, whereas silicon-based films are also deposited on temperature sensitive substrates even below 100°C. Thus the application of hot-wire chemical vapor deposition (HWCVD) is not only governed by the film properties, but also by the temperature tolerance of the substrate material.

A prerequisite for the application of diamond and silicon-based films is the development of efficient deposition processes. In the case of diamond films, we developed HWCVD processes with deposition areas of 500 mm x 1000 mm. These large area diamond coatings are available for wear resistant and low friction coatings as well as for boron doped conductive diamond films on electrodes used for electrochemical applications. In addition to the large area process development the diamond films have to be tailored for these very different specific applications. The performance for tool and wear part applications is dominated by film adhesion but also by surface morphology and thickness uniformity. Diamond coated honing tools and face seals demonstrate solutions for the mentioned issues in the fields of wear and friction reduction. In electrochemical advanced oxidation processes for water treatment  chemical stability at high boron doping levels and integration of diamond electrodes in electrochemical cells and their integration into water treatment systems are of importance. In cooperation with partners from industry and academia we develop system solutions where diamond electrodes are successfully applied for decentralized water treatment systems.

Uniform deposition of amorphous silicon films with an inline HWCVD system  is used for the deposition of passivation layers for silicon heterojunction solar cells . The investigation of the critical issue of filament stability in these processes yielded engineering solutions to reduce silicide formation of the filaments . Multilayers of silicon nitride and silicon oxide  result in all HWCVD antireflective (AR) coatings. We depsosited the the AR coating system on glass and on plastic substrates demonstrating low film stresses.